X-ray induced persistent photoconductivity in Si-doped Al0.35Ga0.65As

نویسندگان

  • Yeong-Ah Soh
  • G. Aeppli
  • Frank M. Zimmermann
  • E. D. Isaacs
  • Anatoly I. Frenkel
چکیده

We demonstrate that x-ray irradiation can be used to induce an insulator–metal transition in Si-doped Al0.35Ga0.65As, a semiconductor with DX centers. The excitation mechanism of the DX centers into their shallow donor state was revealed by studying the photoconductance along with fluorescence. The photoconductance as a function of incident x-ray energy exhibits an edge both at the Ga and As K edge, implying that core–hole excitation of Ga and As are efficient primary steps for the excitation of DX centers. A high quantum yield (@1) suggests that the excitation is indirect and nonlocal, due to secondary electrons, holes, and fluorescence photons. © 2001 American Institute of Physics. @DOI: 10.1063/1.1410894#

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تاریخ انتشار 2001